K4F160412D-F FOLHA DE DADOS,CIRCUITO,A FUNÇÃO

K4F160412D-F Datasheet PDF

Fabricante	Packing	Descrição	PDF	Temperatura
Samsung	TSOP-II	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.	K4F160412D-F PDF	Min°C \| Max°C

Samsung semiconductor K4F160411C
4Bit CMOS Dynamic with Fast Page Mode
Samsung semiconductor K4F160411C-B
4Bit CMOS Dynamic with Fast Page Mode
Samsung semiconductor K4F160411C-F
4Bit CMOS Dynamic with Fast Page Mode
Samsung semiconductor K4F160411D
4Bit CMOS Dynamic with Fast Page Mode
Samsung K4F160411D-B
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
Samsung K4F160411D-F
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
Samsung semiconductor K4F160412C
4Bit CMOS Dynamic with Fast Page Mode
Samsung semiconductor K4F160412C-B
4Bit CMOS Dynamic with Fast Page Mode
Samsung semiconductor K4F160412C-F
4Bit CMOS Dynamic with Fast Page Mode
Samsung semiconductor K4F160412D
4Bit CMOS Dynamic with Fast Page Mode
Samsung K4F160412D-B
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
Samsung K4F160412D-F
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.